The application of chemical-mechanical polishing for planarizing a SU-8/permalloy combination used in MEMS devices

被引：24

作者：

Kourouklis, C ^{[1
]}

Kohlmeier, T ^{[1
]}

Gatzen, HH ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Microtechnol, D-30167 Hannover, Germany

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2003年 / 106卷 / 1-3期

关键词：

chemical-mechanical polishing (CMP); MEMS; permalloy; SU-8;

D O I：

10.1016/S0924-4247(03)00180-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Chemical-mechanical polishing (CMP) allows the planarization of wafers with two or more materials at its surface. Subject of this investigation was to apply CMP for planarizing electroplated permalloy (NiFe 81/19) in micromolds formed by photosensitive epoxy (SU-8). This material remained in the structure as an insulation and planarization layer. This material combination was intended for fabricating magnetic Micro Electro-mechanical Systems (MEMS). For planarizing a SU-8/permalloy combination, metal CMP slurry was used in conjunction with standard CMP polishing pads. SU-8 effectively served as a polishing stop. For this reason it was necessary to optimize the SU-8 properties to exhibit an optimal hardness and wear resistance. The mechanical properties of the SU-8 depended on the thermal treatment during hard bake after development. The resulting SU-8 layer not only had a sufficient hardness to stop the removal of permalloy, but also could be planarized quite well. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：263 / 266

页数：4

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