Phonon lifetimes and phonon decay in InN

被引：78

作者：

Pomeroy, JW

Kuball, M

Lu, H

Schaff, WJ

Wang, X

Yoshikawa, A

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Cornell Univ, Dept Elect Engn, Ithaca, NY 14507 USA

[3] Chiba Univ, Dept Elect & Mech Engn, Chiba 2638522, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 22期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1940124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the Raman analysis of A(1)(LO) (longitudinal optical) and E-2 phonon lifetimes in InN and their temperature dependence from 80 to 700 K. Our experimental results show that among the various possible decay channels, the A(1)(LO) phonon decays asymmetrically into a high energy and a low energy phonon, whereas the E-2 phonon predominantly decays into three phonons. Possible decay channels of the A(1)(LO) phonon may involve combinations of transverse optical and acoustic phonons. Phonon lifetimes of 1.3 and 4 ps were measured at 80 K for the A(1)(LO) and the E-2 phonons, respectively. This rather long A(1)(LO) phonon lifetime suggests that hot phonon effects will play a role in InN for carrier relaxation. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 17 条

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