InN dielectric function from the midinfrared to the ultraviolet range

被引：42

作者：

Kasic, A ^{[1
]}

Valcheva, E

Monemar, B

Lu, H

Schaff, WJ

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.70.115217

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a comprehensive study of the InN dielectric function from the midinfrared range up to 6.5 eV employing spectroscopic ellipsometry at room temperature. The single-crystalline InN films with Hall concentrations varying between 7.7x10(17) and 1.4x10(19) cm(-3) were grown by molecular-beam epitaxy on sapphire substrates and show high structural quality. Free-carrier and phonon properties are determined precisely. The onset of the absorption edge reveals a distinct blueshift with increasing free-electron concentration, from 0.65 eV for the highest resistive material up to 0.80 eV. In the ultraviolet region, electronic interband transitions are detected at 4.84, 5.41, 5.59, and 6.10 eV, the second being the dominating one, and tentatively assigned in the Brillouin zone.

引用

页码：115217 / 1

页数：8

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