Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks

被引:37
作者
Voss, M
Lier, C
Menzel, U
Barwolff, A
Elsaesser, T
机构
[1] Max-Born-Inst. Nichtlineare O.
关键词
D O I
10.1063/1.360900
中图分类号
O59 [应用物理学];
学科分类号
摘要
Laser radiation from GaAs/AlGaAs laser diode arrays of high output power is studied during nano-to millisecond carrier injection in temporally and spectrally resolved emission measurements. A red shift of the multimode emission spectrum by up to 12 nm and a concomitant increase of the total bandwidth are caused by a transient rise of the device temperature by up to 50 K. Spatially resolved experiments reveal a lateral temperature difference of about 2 K between the center and the edge emitters. Different laser array/heat sink combinations are investigated in order to reduce the transient temperature increase. (C) 1996 American Institute of Physics.
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页码:1170 / 1172
页数:3
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