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TEMPERATURE RISE AND THERMAL RISE-TIME MEASUREMENTS OF A SEMICONDUCTOR-LASER DIODE

被引：38
作者：
ABDELKADER, HI
HAUSIEN, HH
MARTIN, JD
机构：
[1] School of Electronic and Electrical Engineering, University of Bath
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 1992年 / 63卷 / 03期
关键词：
D O I：
10.1063/1.1143318
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A novel method is presented for measurement of the rise in temperature and thermal rise time of a semiconductor laser diode (LD) under pulsed operation. The technique employs the shift in LD threshold current which occurs with a rise in junction temperature. Practical results are given, showing a rise time of about 10 ns.
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页码：2004 / 2007
页数：4
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