Entropies associated with electron emission from InAs/GaAS quantum dots

被引：6

作者：

Engström, O ^{[1
]}

Fu, Y ^{[1
]}

Eghtedari, A ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 27卷 / 04期

关键词：

quantum dots; thermal emission rate; entropy factor;

D O I：

10.1016/j.physe.2005.01.001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Entropies associated with the transition of electrons into and out of InAs/GaAs quantum dots (QDs) are calculated by considering the temperature dependence of energy eigenvalues due to strain and energy band offset variations. It is found that, for InAs/GaAs quantum dots with base/height dimensions of 20/10nm, the contribution from the surrounding lattice to entropy is smaller than 4 x 10(-5) eV/K for the temperature region below 100 K, where most measurements of thermal emission rates are performed. Including the electron degeneracy, the total entropy change has an upper limit of 1 x 10(-4) eV/K when releasing the first electron from the s-shell, while the second released s-electron is connected with an entropy change not larger than the absolute value of -2 x 10(-5) eV/K. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：380 / 384

页数：5

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