Electron escape from InAs quantum dots

被引：166

作者：

Kapteyn, CMA

Heinrichsdorff, F

Stier, O

Heitz, R

Grundmann, M

Zakharov, ND

Bimberg, D

Werner, P

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.60.14265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We identify fundamental mechanisms of electron escape from self-organized InAs quantum dots (QD's) in a vertical electric field by time-resolved capacitance spectroscopy. Direct tunneling and a thermally activated escape process are observed. The QD electron ground and first-excited states are concluded to be located similar to 190 and similar to 96 meV below the GaAs matrix conduction band, respectively. Our experimental results and their interpretation are in good agreement with eight-band k.p calculations and demonstrate the importance of tunnel processes. [S0163-1829(99)01344-2].

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页码：14265 / 14268

页数：4

相关论文

共 33 条

[1] DEEP-LEVEL TRANSIENT SPECTROSCOPY OF INP QUANTUM DOTS [J].

ANAND, S ;

CARLSSON, N ;

PISTOL, ME ;

SAMUELSON, L ;

SEIFERT, W .

APPLIED PHYSICS LETTERS, 1995, 67 (20) :3016-3018

[2] Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy [J].

Anand, S ;

Carlsson, N ;

Pistol, ME ;

Samuelson, L ;

Seifert, W .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3747-3755

[3] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[4] Exploitation of optical interconnects in future server architectures [J].

Benner, AF ;

Ignatowski, M ;

Kash, JA ;

Kuchta, DM ;

Ritter, MB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2005, 49 (4-5) :755-775

[5] InGaAs-GaAs quantum-dot lasers [J].

Bimberg, D ;

Kirstaedter, N ;

Ledentsov, NN ;

Alferov, ZI ;

Kopev, PS ;

Ustinov, VM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205

[6]

Blood P., 1992, The Electrical Characterization of Semiconductors. Majority Carriers and Electron States

[7] Electronic structure of self-assembled InAs quantum dots in GaAs matrix [J].

Brounkov, PN ;

Polimeni, A ;

Stoddart, ST ;

Henini, M ;

Eaves, L ;

Main, PC ;

Kovsh, AR ;

Musikhin, YG ;

Konnikov, SG .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1092-1094

[8] Quantum dot resonant cavity photodiode with operation near 1.3 mu m wavelength [J].

Campbell, JC ;

Huffaker, DL ;

Deng, H ;

Deppe, DG .

ELECTRONICS LETTERS, 1997, 33 (15) :1337-1339

[9] ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS AND THE PROPERTIES OF EL2 [J].

DABROWSKI, J ;

SCHEFFLER, M .

PHYSICAL REVIEW B, 1989, 40 (15) :10391-10401

[10] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

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