Quantum dot resonant cavity photodiode with operation near 1.3 mu m wavelength

被引：60

作者：

Campbell, JC

Huffaker, DL

Deng, H

Deppe, DG

机构：

[1] Microelectronics Research Center, Dept. of Elec. and Comp. Engineering, University of Texas at Austin, Austin

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 15期

关键词：

semiconductor quantum dots; photodiodes;

D O I：

10.1049/el:19970906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that strained-laver InGaAs quantum dots grown on GaAs substrates can extend the operating wavelength of GaAs-based optoelectronic devices to wavelengths near 1.3 mu m. Specifically, a 1.27 mu m resonant-cavity photodiode with quantum dot absorbing region is demonstrated. This photodiode exhibits a peak external quantum efficiency of 49% with a spectral bandwidth of 1.2nm.

引用

页码：1337 / 1339

页数：3

共 6 条

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