High photoluminescence efficiency of InGaAs/GaAs quantum dots self-formed by atomic layer epitaxy technique

被引：86

作者：

Mukai, K

Ohtsuka, N

Sugawara, N

机构：

[1] Fujitsu Laboratories, Ltd., Atsugi, 243-01, 10-1, Morinosato-Wakamiya

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 18期

关键词：

THRESHOLD; EXCITONS; EMISSION; LASER;

D O I：

10.1063/1.118889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the photoluminescence (PL) intensity of InGaAs/GaAs quantum dots self-formed by atomic layer epitaxy (ALE) technique as a function of temperature. We report that the reduction of PL intensity following a temperature increase was two-orders smaller in the ALE-grown dots than in the dots grown by molecular beam epitaxy via Stranski-Krastanov mode. Measuring the radiative lifetimes and evaluating the temperature dependence of PL intensity, we conclude that the nonradiative channel outside the dots caused the PL reduction. (C) 1997 American Institute of Physics.

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页码：2416 / 2418

页数：3

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