Controlling Band Gap Energies in Cluster-Assembled Ionic Solids through Internal Electric Fields

被引：69

作者：

Chaki, Nirmalya K. ^{[1
,2
]}

Mandal, Sukhendu ^{[1
,2
]}

Reber, Arthur C. ^{[3
]}

Qian, Meichun ^{[3
]}

Saavedra, Hector M. ^{[1
,2
]}

Weiss, Paul S. ^{[1
,2
,4
,5
]}

Khanna, Shiv N. ^{[3
]}

Sen, Ayusman ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Chem, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[3] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

[4] Univ Calif Los Angeles, Calif NanoSyst Inst, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[5] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

来源：

ACS NANO | 2010年 / 4卷 / 10期

关键词：

cluster-assembled materials; arsenic clusters; band gap tuning; ZINTL IONS; CHEMISTRY; PD-2-AT-SN-18(4-); COMPLEXES; GERMANIUM; ANIONS; MODEL; RB; CS;

D O I：

10.1021/nn101640r

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Assembling ionic solids where clusters are arranged in different architectures is a promising strategy for developing band gap-engineered nanomaterials. We synthesized a series of cluster-assembled ionic solids composed of [As-7-Au-2-As-7](4-) in zero-, one-, and two-dimensional architectures. Higher connectivity is expected to decrease the band gap energy through band broadening. However, optical measurements indicate that the band gap energy increases from 1.69 to 1.98 eV when moving from zero- to two-dimensional assemblies. This increase is a result of the local electric fields generated by the adjacent counterions, which preferentially stabilize the occupied cluster electronic states.

引用

页码：5813 / 5818

页数：6

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