Advanced PECVD processes for highly electron emitting diamond-like-carbon

被引：6

作者：

Jang, J ^{[1
]}

Moon, JH ^{[1
]}

Han, EJ ^{[1
]}

Chung, SJ ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

THIN SOLID FILMS | 1999年 / 341卷 / 1-2期

关键词：

layer-by-layer deposition; diamond-like-carbon; hydrogen-free diamond-like-carbon; gas-phase n-doping;

D O I：

10.1016/S0040-6090(98)01526-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the field emission characteristics of diamond-like-carbon (DLC) films deposited by a layer-by-layer technique using plasma enhanced chemical vapor deposition, in which the deposition of a thin layer of DLC and a CF4 plasma exposure on its surface were carried out alternatively. The hydrogen-free DLC can be deposited by CF4 plasma exposure for 140 s on a 5 nm DLC layer and show!, an enhanced electron emitting behavior. N-2 gas-phase doping in the CH4 plasma was also carried out to reduce the work function of DLC. The optimum [N-2]/[CH4] flow rate ratio was found to be 9% for the efficient electron emission, at which the onset-Acid was 7.2 V/mu m. It was found that the hydrogen-free DLC has a very stable electron emitting property. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：196 / 201

页数：6

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