Temperature dependence of excitonic absorption spectra in ZnO/Zn0.88Mg0.12O multiquantum wells grown on lattice-matched substrates

被引:86
作者
Sun, HD [1 ]
Makino, T
Tuan, NT
Segawa, Y
Kawasaki, M
Ohtomo, A
Tamura, K
Koinuma, H
机构
[1] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan
[2] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
关键词
D O I
10.1063/1.1367300
中图分类号
O59 [应用物理学];
学科分类号
摘要
The excitonic properties of high-quality ZnO/Zn0.88Mg0.12O multiquantum wells grown by laser-molecular-beam epitaxy were investigated using temperature-dependent optical absorption spectra from 5 K to room temperature. The strength of exciton-longitudinal-optical (LO) -phonon coupling was deduced from the temperature dependence of the linewidth of the fundamental excitonic peak. Effective reduction of the exciton-LO-phonon coupling with decreasing the well width was observed, which is consistent with the confinement-induced enhancement of the exciton binding energy. The thermal shift of the lowest excitonic energy is independent of well width, indicating that the strain effect is negligible for this material. (C) 2001 American Institute of Physics.
引用
收藏
页码:2464 / 2466
页数:3
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