Characterization of mid-gap states in HVPE and MOVPE-grown n-type GaN

被引：19

作者：

Hacke, P

Okushi, H

Kuroda, T

Detchprohm, T

Hiramatsu, K

Sawaki, N

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

[2] Nagoya Univ, Chikusa Ku, Nagoya, Aichi 46401, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaN; deep levels; DLTS; ICTS;

D O I：

10.1016/S0022-0248(98)00189-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Optical-isothermal capacitance transient spectroscopy (O-ICTS) is used to characterize the mid-gap states in n-type GaN grown by hydride vapor phase epitaxy and metalorganic vapor phase epitaxy. Deep levels are resolved by the emission rate of carries in addition to the magnitude of the capacitance transient as a function of incident photon energy. The mid-gap region is dominated by a distribution of traps from which carriers photoionize to the conduction band in the range of about 1.5 to 2.5 eV; these traps are suspected of participating in the frequently observed yellow luminescence. The concentration of these mid-gap states are found to be lowest in thick HVPE-grown GaN films. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：541 / 545

页数：5

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