Growth of ZnO:Ga thin films at room temperature on polymeric substrates:: thickness dependence

被引:97
作者
Fortunato, E
Gonçalves, A
Assunçao, V
Marques, A
Aguas, H
Pereira, L
Ferreira, I
Martins, R
机构
[1] Univ Nova Lisboa, FCT, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal
[2] Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Portugal
关键词
zinc oxide; sputtering; electrical properties and measurements; polymers;
D O I
10.1016/S0040-6090(03)00958-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we present results concerning the thickness dependence (from 70 to 890 nm) of electrical, structural, morphological and optical properties presented by gallium-doped zinc oxide (GZO) deposited on polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. For thicknesses higher than 300 nm an independent correlation between the electrical, morphological, structural and optical properties are observed. The lowest resistivity obtained was 5 X 10(-4) Omega cm with a sheet resistance of 15 Omega/square and an average optical transmittance in the visible part of the spectra of 80%. It is also shown that by passivating the surface of the polymer by depositing a thin silicon dioxide layer the electrical and structural properties of the films are improved nearly by a factor of two. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:121 / 126
页数:6
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