Metalorganic vapor phase epitaxy and characterization of Zn1-xSe films

被引：26

作者：

Mountziaris, TJ ^{[1
]}

Peck, J ^{[1
]}

Stoltz, S ^{[1
]}

Yu, WY ^{[1
]}

Petrou, A ^{[1
]}

机构：

[1] SUNY COLL FREDONIA,DEPT PHYS,FREDONIA,NY 14063

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 16期

关键词：

D O I：

10.1063/1.115881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth of the diluted magnetic semiconductor (DMS) Zn1-xFexSe (0 < x less than or equal to 0.22) by metalorganic vapor phase epitaxy (MOVPE) is reported. The films were grown on (100) GaAs substrates in a vertical stagnation flow reactor with a specially designed inlet to minimize prereactions between the groups II and VI precursors. The precursors used in this study were (CH3)(2)Zn:N(CH2H5)(3), Fe(CO)(5), and H2Se diluted in H-2 carrier gas. The epilayers were characterized by x-ray diffraction (XRD), Raman, absorption, and x-ray photoelectron spectroscopies (XPS). Typical growth rates were from 3-4 mu m/h, which are significantly higher than those obtained by molecular beam epitaxy. Thus, in addition to the growth of DMS multilayer structures, MOVPE appears to. be very promising for efficient growth of thick DMS films for Faraday magneto-optical applications. (C) 1996 American Institute of Physics.

引用

页码：2270 / 2272

页数：3

共 12 条

[1] INTERBAND FARADAY-ROTATION IN DILUTED MAGNETIC SEMICONDUCTORS - ZN1-XMNXTE AND CD1-XMNXTE [J].