RECENT ADVANCES IN METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：17

作者：

KUECH, TF

机构：

[1] Department of Chemical Engineering, University of Wisconsin, Madison

来源：

PROCEEDINGS OF THE IEEE | 1992年 / 80卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/5.168669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The recent progress in the development and application of metal-organic vapor phase epitaxy (MOVPE) is reviewed. Advances in this technique have allowed the formation of new and unique materials and structures. Wide-bandgap materials of both III-V and II-VI semiconductors are examples of new materials which can have an impact on optical and electronic device structures. The basic studies of the underlying chemistry and fluid flow behavior in MOVPE reactors have brought improvements in the control of material properties and the uniformity of growth. New growth precursors can yield both selective area growth and improved material purity. Improved reproducibility of the MOVPE growth product using growth monitors, for the real-time determination of film thickness and composition, results in a greater acceptance of the MOVPE technique in the manufacturing environment.

引用

页码：1609 / 1624

页数：16

共 123 条

[1] GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE [J].