QUANTUM WIRE LASERS BY OMCVD GROWTH ON NONPLANAR SUBSTRATES

被引:42
作者
BHAT, R
KAPON, E
SIMHONY, S
COLAS, E
HWANG, DM
STOFFEL, NG
KOZA, MA
机构
[1] Bellcore, Red Bank
关键词
D O I
10.1016/0022-0248(91)90548-J
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this paper, we describe the progress made in the fabrication of quantum wire lasers using growth on nonplanar substrates as a lateral patterning technique. GaAs/AlGaAs quantum wire injection lasers with up to three crescent-shaped quantum wire active regions have been fabricated. The lowest threshold current of 2.4 mA was obtained for lasers with 2 quantum wires. We also report on two techniques for the fabrication of quantum wire arrays in GaAs/AlGaAs. Finally, we present our results on an attempt to fabricate quantum wire lasers based on InP, and propose possible solutions to the problems encountered.
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页码:716 / 723
页数:8
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