ORIENTATION DEPENDENCE OF S, ZN, SI, TE, AND SN DOPING IN OMCVD GROWTH OF INP AND GAAS - APPLICATION TO DH LASERS AND LATERAL P-N-JUNCTION ARRAYS GROWN ON NONPLANAR SUBSTRATES

The orientation dependence of doping in organometallic chemical vapor deposition (OMCVD) is shown to be far more complex than previously believed, with the variation of doping with increasing misorientation from (100) towards the (111)A/B being non-monotonic. However, the ratio of the n-doping on the B face to that on the corresponding A face is always greater than 1, irrespective of whether the dopant is a group IV or VI element. For p-doping with Zn, the reverse is true. The orientation dependence of doping has been used to create current blocking layers in InP/InGaAsP double heterostructure (DH) and multiple quantum well (MQW) lasers grown in a single step on a mesa or in a V-groove.