ORIENTATION DEPENDENT AMPHOTERIC BEHAVIOR OF GROUP-IV IMPURITIES IN THE MOLECULAR-BEAM EPITAXIAL AND VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS

被引：50

作者：

LEE, B

BOSE, SS

KIM, MH

REED, AD

STILLMAN, GE

WANG, WI

VINA, L

COLTER, PC

机构：

[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

[2] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

[3] UNIVERSAL ENERGY SYST INC, DAYTON, OH 45432 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 01期

关键词：

D O I：

10.1016/0022-0248(89)90272-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：27 / 39

页数：13

共 63 条

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].

ABBINK, HC ;

BROUDY, RM ;

MCCARTHY, GP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&

[2] DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION [J].

AHN, BH ;

SHURTZ, RR ;

TRUSSELL, CW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4512-&

[3] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDREWS, DA ;

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4421-4425

[4] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[5] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[6] MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF CVD OF SOME III-V COMPOUNDS [J].

BAN, VS .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :19-&

[7] THE FEATHERING OF DOPING STRIATIONS IN SEMICONDUCTOR CRYSTALS [J].

BAUSER, E ;

ROZGONYI, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1782-1785

[8] A LATERAL MICROSCOPIC GROWTH-MODEL FOR HETEROGENEOUS IMPURITY INCORPORATION DURING CZOCHRALSKI CRYSTAL-GROWTH [J].

BAUSER, E ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1001-1003

[9] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

BAUSER, E ;

FRIK, M ;

LOECHNER, KS ;

SCHMIDT, L ;

ULRICH, R .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :148-153

[10]

BENNEMA P, 1973, CRYSTAL GROWTH INTRO, P263

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