ORIENTATION-DEPENDENT DOPING IN ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION ON NONPLANAR INP SUBSTRATES - APPLICATION TO DOUBLE-HETEROSTRUCTURE LASERS AND LATERAL P-N-JUNCTION ARRAYS

In this letter we show that the orientation dependence of dopant incorporation can be used to obtain lateral patterning of doping by growing on nonplanar substrates. Specifically, organometallic chemical vapor deposition has been used to obtain lateral p-n junction arrays and selective deposition of alternating p-n layers of InP. The latter technique has been used to grow double-heterostructure lasers with current confinement layers in a single step.