A NEW TECHNIQUE FOR THE GROWTH OF COMPOSITIONALLY GRADED LAYERS BY OMCVD FOR NOVEL DEVICE STRUCTURES

被引：2

作者：

BHAT, R ^{[1
]}

KOZA, MA ^{[1
]}

HAYES, JR ^{[1
]}

LEVI, AFJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90314-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：293 / 296

页数：4

共 9 条

[1] DEGRADATION-FREE MODULATION-DOPED FIELD-EFFECT TRANSISTORS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

BHAT, R ;

CHAN, WK ;

KASTALSKY, A ;

KOZA, MA ;

DAVISSON, PS .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1344-1346

[2]

BHAT R, 1985, 3 SOTAPOCS EL SOC M

[3] GROWTH AND CHARACTERIZATION OF ALGAAS/GAAS QUANTUM WELL LASERS [J].

BURNHAM, RD ;

STREIFER, W ;

PAOLI, TL ;

HOLONYAK, N .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :370-382

[4] ALGAAS-GAAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - A REVIEW [J].

DUPUIS, RD .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :213-222

[5] STRUCTURE OF GAAS-GA1-XALXAS SUPER-LATTICES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

GRIFFITHS, RJM ;

CHEW, NG ;

CULLIS, AG ;

JOYCE, GC .

ELECTRONICS LETTERS, 1983, 19 (23) :988-990

[6] HOT-ELECTRON SPECTROSCOPY OF GAAS [J].

HAYES, JR ;

LEVI, AFJ ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1985, 54 (14) :1570-1572

[7] PHOTO-LUMINESCENCE OF ALXGA1-XAS/ALYGA1-YAS MULTIGUANTUM WELLS GROWN BY PULSED MOLECULAR-BEAM EPITAXY [J].

KAWABE, M ;

KONDO, M ;

MATSUURA, N ;

YAMAMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L64-L66

[8] COMPOSITION CONTROL OF ALXGA1-XAS AND NEW TYPE OF SUPER-LATTICE BY PULSED MOLECULAR-BEAM [J].

KAWABE, M ;

MATSUURA, N ;

INUZUKA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (07) :L447-L448

[9] PARABOLIC QUANTUM WELLS WITH THE GAAS-ALXGA1-XAS SYSTEM [J].

MILLER, RC ;

GOSSARD, AC ;

KLEINMAN, DA ;

MUNTEANU, O .

PHYSICAL REVIEW B, 1984, 29 (06) :3740-3743

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