DEGRADATION-FREE MODULATION-DOPED FIELD-EFFECT TRANSISTORS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：8

作者：

BHAT, R

CHAN, WK

KASTALSKY, A

KOZA, MA

DAVISSON, PS

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1344 / 1346

页数：3

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