AIGAAS/GAAS 2-DEG FETS FABRICATED FROM MO-CVD WAFERS

[1] GROWTH OF (AL,GA)AS/GAAS HETEROSTRUCTURES FOR HEMT DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 445 - 449

[2] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[3] Drummond T. J., 1982, International Electron Devices Meeting. Technical Digest, P586

[4] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341

[5] HIGH-SPEED LOW-VOLTAGE RING OSCILLATORS BASED ON SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 306 - 307

[6] CURRENT-VOLTAGE CHARACTERISTICS OF AN ALGAAS/GAAS HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 496 - 499

[7] KOBAYASHI N, 1984, ELECTRON LETT, V20, P887, DOI 10.1049/el:19840602

[8] KOBAYASHI N, 1984, 15TH P C SOL STAT DE, P671

[9] HIGH-PERFORMANCE MODULATION-DOPED GAAS INTEGRATED-CIRCUITS WITH PLANAR STRUCTURES [J]. ELECTRONICS LETTERS, 1983, 19 (05) : 155 - 157

[10] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 374 - 376

[1] GROWTH OF (AL,GA)AS/GAAS HETEROSTRUCTURES FOR HEMT DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 445 - 449

[2] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[3] Drummond T. J., 1982, International Electron Devices Meeting. Technical Digest, P586

[4] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341

[5] HIGH-SPEED LOW-VOLTAGE RING OSCILLATORS BASED ON SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 306 - 307

[6] CURRENT-VOLTAGE CHARACTERISTICS OF AN ALGAAS/GAAS HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 496 - 499

[7] KOBAYASHI N, 1984, ELECTRON LETT, V20, P887, DOI 10.1049/el:19840602

[8] KOBAYASHI N, 1984, 15TH P C SOL STAT DE, P671

[9] HIGH-PERFORMANCE MODULATION-DOPED GAAS INTEGRATED-CIRCUITS WITH PLANAR STRUCTURES [J]. ELECTRONICS LETTERS, 1983, 19 (05) : 155 - 157

[10] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 374 - 376