Ferroelectric properties of alkoxy-derived CaBi4Ti4O15 thin films on Pt-passivated Si

被引：78

作者：

Kato, K

Suzuki, K

Nishizawa, K

Miki, T

机构：

[1] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 4628510, Japan

[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 08期

关键词：

D O I：

10.1063/1.1349871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CaBi4Ti4O15 (CBTi144) thin films were prepared by spin coating a precursor solution of metal alkoxides. As-deposited thin films began crystallization below 550 degreesC and reached full crystallinity of a single phase of layered perovskite at 650 degreesC via rapid thermal annealing in oxygen. The 650 degreesC annealed CBTi144 thin film showed random orientation on Pt-passivated Si substrate and exhibited P-E hysteresis loops. The remanent polarization (P-r) and coercive electric field (E-c) were 9.4 muC/cm(2) and 106 kV/cm, respectively, at 11 V. The dielectric constant and loss factor were 300 and 0.033, respectively, at 100 kHz. (C) 2001 American Institute of Physics.

引用

页码：1119 / 1121

页数：3

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