Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films

被引：59

作者：

Aizawa, K

Tokumitsu, E

Okamoto, K

Ishiwara, H

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 18期

关键词：

D O I：

10.1063/1.126424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An annealing method for preparing SrBi2Ta2O9 (SBT) thin films, a face-to-face annealing method, is proposed, and its effectiveness is demonstrated. In this method, an SBT film deposited on a substrate using a sol-gel technique was directly put with the film side down on the other SBT film during crystallization process. The SBT films were crystallized at 750 degrees C in an oxygen flow and successively annealed at 400 degrees C in a 6.2 wt % ozone flow. It was found that remanent polarization value (2Pr) in a 175-nm-thick SBT film was as large as 23 mu C/cm(2) when the face-to-face annealing method was conducted. It was also found from time-dependent leakage current measurement that the leakage current density of the films was lower than 1x10(-9) A/cm(2) at an electric field of 65 kV/cm. (C) 2000 American Institute of Physics. [S0003-6951(00)00318-1].

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页码：2609 / 2611

页数：3

相关论文

共 10 条

[1] PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS [J].

AMANUMA, K ;

HASE, T ;

MIYASAKA, Y .

APPLIED PHYSICS LETTERS, 1995, 66 (02) :221-223

[2] Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method [J].

Hu, GD ;

Wilson, IH ;

Xu, JB ;

Cheung, WY ;

Wong, SP ;

Wong, HK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1221-1223

[3] New low temperature processing of sol-gel SrBi2Ta2O9 thin films [J].

Ito, Y ;

Ushikubo, M ;

Yokoyama, S ;

Matsunaga, H ;

Atsuki, T ;

Yonezawa, T ;

Ogi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B) :4925-4929

[4] Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique [J].

Joshi, PC ;

Ryu, SO ;

Zhang, X ;

Desu, SB .

APPLIED PHYSICS LETTERS, 1997, 70 (09) :1080-1082

[5] CHARACTERISTICS OF BISMUTH LAYERED SRBI2TA2O9 THIN-FILM CAPACITORS AND COMPARISON WITH PB(ZR,TI)O-3 [J].

MIHARA, T ;

YOSHIMORI, H ;

WATANABE, H ;

DEARAUJO, CAP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5233-5239

[6] Analysis of the dependence of ferroelectric properties of strontium bismuth tantalate (SET) thin films on the composition and process temperature [J].

Noguchi, T ;

Hase, T ;

Miyasaka, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B) :4900-4904

[7]

PAZDEARAUJO CA, 1995, NATURE, V374, P627

[8] Conformal LSMCD deposition of SrBi2(Ta1-xNbx)(2)O-9 [J].

Solayappan, N ;

Derbenwick, GF ;

McMillan, LD ;

DeAraujo, CAP ;

Hayashi, S .

INTEGRATED FERROELECTRICS, 1997, 14 (1-4) :237-246

[9]

Taylor DJ, 1996, APPL PHYS LETT, V68, P2300, DOI 10.1063/1.116170

[10] Fatigue characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition [J].

Zhang, ZG ;

Liu, JS ;

Wang, YN ;

Zhu, JS ;

Yan, F ;

Chen, XB ;

Shen, HM .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :788-790