Fatigue characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

被引：61

作者：

Zhang, ZG ^{[1
]}

Liu, JS ^{[1
]}

Wang, YN ^{[1
]}

Zhu, JS ^{[1
]}

Yan, F ^{[1
]}

Chen, XB ^{[1
]}

Shen, HM ^{[1
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.122002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. Electric measurements demonstrate that fatigue increases with decreasing switching voltage and frequency, and the suppressed polarization caused at a lower switching voltage can be recovered by switching at a higher voltage. This suggests that the domain walls of SET thin films are weakly pinned and easily depinned by a higher external field. The polarization of SET thin films annealed in air shows more degradation than that annealed in oxygen, which indicates that the oxygen vacancy also plays an important role in fatigue behavior of SET thin films. (C) 1998 American Institute of Physics. [S0003-6951(98)01032-8].

引用

页码：788 / 790

页数：3

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