Conformal LSMCD deposition of SrBi2(Ta1-xNbx)(2)O-9

被引:15
作者
Solayappan, N [1 ]
Derbenwick, GF [1 ]
McMillan, LD [1 ]
DeAraujo, CAP [1 ]
Hayashi, S [1 ]
机构
[1] MATSUSHITA ELECT IND CO LTD,TAKATSUKI,OSAKA 569,JAPAN
关键词
D O I
10.1080/10584589708019997
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents new results of Liquid Source Misted Chemical Deposition (LSMCD) of SrBi2(Ta1-xNbx)(2)O-9 thin films showing good step coverage of 150 mn thick. films into square openings approximately 1 mu m deep by 0.6 mu m wide. A SAMCO model HDF-6000 LSMCD machine was used for-the ferroelectric deposition Prior to the deposition of the ferroelectric film, a Pt bottom electrode of approximately 200 mn thickness was sputtered into an initial opening 1 mu m deep by 1 mu m wide. The LSMCD and new chemistry methodologies by which these results were obtained will be described in this paper. The electrical characteristics of the LSMCD films will also be reported. LSMCD films resulted in higher switched charge (2P(r)) than the spin-on films. The coercive fields (2E(c)) and maximum leakage currents were comparable for the two deposition methods. These results show that conformal LSMCD thin films can be used for sub-micron circuits containing ferroelectric memory.
引用
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页码:237 / 246
页数:10
相关论文
共 10 条
[1]  
AUCIELLO O, 1996, IN PRESS P 8 INT S I
[2]   BASE ELECTRODES FOR HIGH DIELECTRIC-CONSTANT OXIDE MATERIALS IN SILICON TECHNOLOGY [J].
GRILL, A ;
KANE, W ;
VIGGIANO, J ;
BRADY, M ;
LAIBOWITZ, R .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (12) :3260-3265
[3]  
HIDY GM, 1984, AEROSOLS IND ENV SCI, P133
[4]   Liquid source misted chemical deposition (LSMCD) - A critical review [J].
Huffman, M .
INTEGRATED FERROELECTRICS, 1995, 10 (1-4) :39-53
[5]  
MIYASAKA Y, 1996, IN PRESS P 8 INT S I
[6]  
MOAZZAMI R, 1994, S VLSI TECHN DIG TEC, P55
[7]   Ferroelectric capacitor nondestructive readout memory [J].
Ramer, OG ;
Drab, J ;
Robinson, D ;
Nishimoto, D .
INTEGRATED FERROELECTRICS, 1995, 11 (1-4) :171-177
[8]  
RAMESH R, 1993, MATER RES SOC S P, V310, P195
[9]  
VANBUSKIRK PC, 1995, IN PRESS P DRY PROC
[10]   POLARIZATION SUPPRESSION IN PB(ZR,TI)O-3 THIN-FILMS [J].
WARREN, WL ;
DIMOS, D ;
TUTTLE, BA ;
PIKE, GE ;
SCHWARTZ, RW ;
CLEWS, PJ ;
MCINTYRE, DC .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) :6695-6702