Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

被引：70

作者：

Afanas'ev, V. V. ^{[1
]}

Stesmans, A. ^{[1
]}

Delabie, A. ^{[2
]}

Bellenger, F. ^{[2
]}

Houssa, M. ^{[2
]}

Meuris, M. ^{[2
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Heverlee, Belgium

[2] IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

关键词：

D O I：

10.1063/1.2831668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Analysis of internal photoemission and photoconductivity in Ge/thermal germanium oxide/high-dielectric constant oxide (HfO2,Al2O3) structures reveals that the bandgap of the germanium oxide interlayer is significantly lower (4.3 +/- 0.2 eV) than that of stiochiometric GeO2 (5.4-5.9 eV). As a result, the conduction and valence band offsets at the interface appear to be insufficient to block electron and hole injection leading to significant charge trapping in the GeOx/high-kappa oxide stack. Formation of a hydroxyl-rich Ge oxide phase is suggested to be responsible for the modification of the oxide properties. (c) 2008 American Institute of Physics.

引用

页数：3

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