A silicon sensor for SO2

[1] BOCARSLY AB, 1994, ACS SYM SER, V561, P78

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048

[3] PROTON GATED EMISSION FROM POROUS SILICON [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1993, 115 (07) : 3024 - 3025

[4] REVERSIBLE LUMINESCENCE QUENCHING OF POROUS SI BY SOLVENTS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1992, 114 (05) : 1911 - 1912

[5] CURRENT-INDUCED LIGHT-EMISSION FROM A POROUS SILICON DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) : 691 - 692

[6] DESIGN AND STUDY OF A PHOTOSENSITIVE INTERFACE - DERIVATIZED NORMAL-TYPE SILICON PHOTO-ELECTRODE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (05) : 1602 - 1603

[1] BOCARSLY AB, 1994, ACS SYM SER, V561, P78

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048

[3] PROTON GATED EMISSION FROM POROUS SILICON [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1993, 115 (07) : 3024 - 3025

[4] REVERSIBLE LUMINESCENCE QUENCHING OF POROUS SI BY SOLVENTS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1992, 114 (05) : 1911 - 1912

[5] CURRENT-INDUCED LIGHT-EMISSION FROM A POROUS SILICON DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) : 691 - 692

[6] DESIGN AND STUDY OF A PHOTOSENSITIVE INTERFACE - DERIVATIZED NORMAL-TYPE SILICON PHOTO-ELECTRODE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (05) : 1602 - 1603