Local strain in interface: Origin of grain tilting in diamond (001) silicon (001) heteroepitaxy

被引：18

作者：

Jiang, X ^{[1
]}

Zhang, RQ ^{[1
]}

Yu, G ^{[1
]}

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.58.15351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond grain tilting, one of the central problems of diamond heteroepitaxy on silicon (001) surface, has been studied by means of atomic-force and high-resolution electron microscopic observations, and by theoretical simulation using the molecular-orbital method. It is shown that, due to interface mismatch-induced local lattice strain and three-dimensional stacking, diamond nucleation in small areas results naturally in grain tilting. For more perfect heteroepitaxy, nucleation with reduced silicon surface damage and over relatively large lateral domains is required. [S0163-1829(98)06647-8].

引用

页码：15351 / 15354

页数：4

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