MOCVD synthesis of yttria doped perovskite type SrCeO3 thin films

被引：10

作者：

Pan, M

Meng, GY ^{[1
]}

Chen, CS

Peng, DK

Lin, YS

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Peoples R China

[2] Univ Cincinnati, Dept Chem Engn, Cincinnati, OH 45221 USA

来源：

MATERIALS LETTERS | 1998年 / 36卷 / 1-4期

基金：

中国国家自然科学基金; 美国国家科学基金会;

关键词：

MOCVD; beta-diketonate precursor; perovskite; doped SrCeO3; thin film;

D O I：

10.1016/S0167-577X(97)00284-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Yttria doped SrCeO3 films were deposited on YSZ substrates by MOCVD using a novel solid precursor containing a mixture of beta-diketonate complexes of Sr, Ce and Y. The deposited films were polycrystalline consisting of nanoscale crystallizes. Single crystal YSZ substrate was found to be most suitable for preparing yttria doped SrCeO3 films. Using dry and well-mixed precursor was critical for obtaining a single phase yttria doped perovskite SrCeO3, films by the MOCVD method. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：44 / 47

页数：4

共 12 条

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[2]

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