Electrical properties of (Zr,Sn)TiO4 dielectric thin film prepared by pulsed laser deposition

被引：84

作者：

Nakagawara, O ^{[1
]}

Toyota, Y ^{[1
]}

Kobayashi, M ^{[1
]}

Yoshino, Y ^{[1
]}

Katayama, Y ^{[1
]}

Tabata, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.362795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have been successful in obtaining temperature-stable crystallized thin film of (Zr,Sn)TiO4. Preferential (Ill)-oriented (Zr,Sn)TiO4 thin film was prepared by pulsed laser deposition. Effects of crystallization were elucidated based on a comparison of electric properties of crystallized and amorphous (Zr,Sn)TiO, film. For crystallized film, the temperature coefficient of capacitance (TCC) was 20 ppm/degrees C at 3 MHz and the dielectric constant epsilon(r)=38 in the microwave range of 1-10 GHz. These values are superior to those for amorphous him (TCC=220 ppm/degrees C, epsilon(r)=27). The crystallization of this material was found quite effective for improving dielectrical properties. Atomic force microscope images showed the surface morphologies of crystallized and amorphous film of (Zr,Sn)TiO4 to differ. (C) 1996 American Institute of Physics.

引用

页码：388 / 392

页数：5