Fabrication of ultrafast Si based MSM photodetector

被引：13

作者：

Loken, M ^{[1
]}

Kappius, L ^{[1
]}

Manti, S ^{[1
]}

Buchal, C ^{[1
]}

机构：

[1] Forschungszentrum Julich, ISI, D-52425 Julich, Germany

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 10期

关键词：

D O I：

10.1049/el:19980661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on ultrafast metal-semiconductor-metal (MSM) photodetectors. The devices are manufactured on an epitaxial CoSi2 ground plate on silicon, and use single crystalline silicon as the photosensitive layer. The MSM photodiodes show an impulse response of up to 3.5ps FWHM on (111) Si and 6.7ps FWHM on (100) Si. An external quantum efficiency of 4.6% was measured.

引用

页码：1027 / 1028

页数：2

共 5 条

[1]

BURN, 1994, IEEE PHOTONIC TECH L, V6, P722

[2] 140-GHZ METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON SILICON-ON-INSULATOR SUBSTRATE WITH A SCALED ACTIVE LAYER [J].