COMPARISON OF THE PICOSECOND CHARACTERISTICS OF SILICON AND SILICON-ON-SAPPHIRE METAL-SEMICONDUCTOR-METAL PHOTODIODES

被引：24

作者：

WANG, CC ^{[1
]}

ALEXANDROU, S ^{[1
]}

JACOBSPERKINS, D ^{[1
]}

HSIANG, TY ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14623

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 26期

关键词：

D O I：

10.1063/1.111203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The picosecond characteristics of silicon-based metal-semiconductor-metal (MSM) diodes with submicrometer finger spacing and width were studied. Diodes made on both bulk silicon and silicon-on-sapphire (SOS) substrates were measured by a subpicosecond electro-optic sampling system. The response of bulk-silicon MSM diodes was strongly dependent on the wavelength of the excitation light because of the change in penetration depth. The response of SOS diodes, on the other hand, had a weak dependence on wavelength since the thickness of the silicon layer limits the depth of photogenerated carriers. The response of a 200 nm SOS diode has a full-width at half-maximum of 4.5 and 5.7 ps with blue- and red-light excitations. The external quantum efficiency of SOS diodes was also determined at several selected wavelengths.

引用

页码：3578 / 3580

页数：3

共 13 条

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