32 GHZ METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON CRYSTALLINE SILICON

被引：13

作者：

CHOU, SY ^{[1
]}

LIU, Y ^{[1
]}

CARRUTHERS, TF ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 15期

关键词：

D O I：

10.1063/1.108418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interdigitated metal-semiconductor-metal (MSM) photodetectors with 1.2 mum finger spacing and 0.8 mum finger width were fabricated on crystalline Si substrate. The devices are transit time limited, exhibiting a measured full width at half maximum response time of 14 ps and a 3-dB bandwidth of 32 GHz. Monte Carlo simulations of Si MSM photodetector response time and bandwidth agree with experiments and predict that if the finger spacing of the Si MSM photodetectors is reduced to 25 nm, the response time can decrease to approximately 1 ps and the bandwidth can increase to 440 GHz.

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页码：1760 / 1762

页数：3

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