105-GHZ BANDWIDTH METAL-SEMICONDUCTOR METAL PHOTODIODE

被引：85

作者：

VANZEGHBROECK, BJ ^{[1
]}

PATRICK, W ^{[1
]}

HALBOUT, JM ^{[1
]}

VETTIGER, P ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 10期

关键词：

D O I：

10.1109/55.17833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：527 / 529

页数：3

共 14 条

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[6]

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IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :600-602

[8] THE DSI DIODE - A FAST LARGE-AREA OPTOELECTRONIC DETECTOR [J].

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[9]

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[10] PICOSECOND PHOTOCONDUCTIVITY IN RADIATION-DAMAGED SILICON-ON-SAPPHIRE FILMS [J].

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