THE DSI DIODE - A FAST LARGE-AREA OPTOELECTRONIC DETECTOR

被引：57

作者：

ROTH, W

SCHUMACHER, H

KLUGE, J

GEELEN, HJ

BENEKING, H

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

[2] UNIV ESSEN GESAMTHSCH,DEPT PHYS,D-4300 ESSEN 1,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/T-ED.1985.22069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1034 / 1036

页数：3

共 9 条

[1]

AUSTON DH, 1984, CLEO P ANAHEIM, P70

[2] ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR-DETECTORS [J].

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1431-1441

[3]

FIGUEROA L, 1981, IEEE T ELECTRON DEVI, V2, P112

[4]

LENTH W, 1984, CLEO P, P72

[5] FAST PHOTOCONDUCTIVE GAAS DETECTORS MADE BY LASER STIMULATED MOCVD [J].

ROTH, W ;

SCHUMACHER, H ;

BENEKING, H .

ELECTRONICS LETTERS, 1983, 19 (04) :142-143

[6] KINETICS OF PICOSECOND PULSE GENERATION IN SEMICONDUCTOR-LASERS WITH BIMOLECULAR RECOMBINATION AT HIGH-CURRENT INJECTION [J].

SCHOLL, E ;

BIMBERG, D ;

SCHUMACHER, H ;

LANDSBERG, PT .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (04) :394-399

[7] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS [J].

SUGETA, T ;

URISU, T ;

SAKATA, S ;

MIZUSHIMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :459-464

[8] 100 GHZ BANDWIDTH PLANAR GAAS SCHOTTKY PHOTO-DIODE [J].

WANG, SY ;

BLOOM, DM .

ELECTRONICS LETTERS, 1983, 19 (14) :554-555

[9] SYMMETRICAL MOTT BARRIER AS A FAST PHOTODETECTOR [J].

WEI, CJ ;

KLEIN, HJ ;

BENEKING, H .

ELECTRONICS LETTERS, 1981, 17 (19) :688-690

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