MONOLITHIC INTEGRATION OF A 3-GHZ DETECTOR PREAMPLIFIER USING A REFRACTORY-GATE, ION-IMPLANTED MESFET PROCESS

被引：38

作者：

ROGERS, DL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期

关键词：

D O I：

10.1109/EDL.1986.26487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：600 / 602

页数：3

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