A MONOLITHIC 4-CHANNEL PHOTORECEIVER INTEGRATED ON A GAAS SUBSTRATE USING METAL-SEMICONDUCTOR-METAL PHOTODIODES AND FETS

被引：25

作者：

MAKIUCHI, M

HAMAGUCHI, H

KUMAI, T

ITO, M

WADA, O

SAKURAI, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 12期

关键词：

D O I：

10.1109/EDL.1985.26257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：634 / 635

页数：2

相关论文

共 7 条

[1] GAAS INTEGRATED OPTOELECTRONICS
BARCHAIM, N
MARGALIT, S
YARIV, A
URY, I
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1372 - 1381
[2] MONOLITHIC INTEGRATION OF A METAL-SEMICONDUCTOR METAL PHOTODIODE AND A GAAS PREAMPLIFIER
ITO, M
WADA, O
NAKAI, K
SAKURAI, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 531 - 532
[3] MAKIUCHI M, 1984 IEDM, P863
[4] MONOLITHIC INTEGRATION OF A LOW THRESHOLD CURRENT QUANTUM WELL LASER AND A DRIVER CIRCUIT ON A GAAS SUBSTRATE
SANADA, T
YAMAKOSHI, S
HAMAGUCHI, H
WADA, O
FUJII, T
HORIMATSU, T
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 226 - 228
[5] SLAYMAN CW, 1981, IEEE ELECTRON DEVICE, V17, P688
[6] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS
SUGETA, T
URISU, T
SAKATA, S
MIZUSHIMA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 459 - 464
[7] ALGAAS/GAAS P-I-N PHOTODIODE PREAMPLIFIER MONOLITHIC PHOTORECEIVER INTEGRATED ON A SEMI-INSULATING GAAS SUBSTRATE
WADA, O
HAMAGUCHI, H
MIURA, S
MAKIUCHI, M
NAKAI, K
HORIMATSU, H
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 981 - 983