ALGAAS/GAAS P-I-N PHOTODIODE PREAMPLIFIER MONOLITHIC PHOTORECEIVER INTEGRATED ON A SEMI-INSULATING GAAS SUBSTRATE

被引：23

作者：

WADA, O

HAMAGUCHI, H

MIURA, S

MAKIUCHI, M

NAKAI, K

HORIMATSU, H

SAKURAI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.95924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：981 / 983

页数：3

共 9 条

[1] MONOLITHIC OPTOELECTRONIC INTEGRATION OF A GAALAS LASER, A FIELD-EFFECT TRANSISTOR, AND A PHOTODIODE [J].

BARCHAIM, N ;

LAU, KY ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :941-943

[2]

INOUE K, 1983, TOKYO TECH DIG, P186

[3] PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER [J].

KOLBAS, RM ;

ABROKWAH, J ;

CARNEY, JK ;

BRADSHAW, DH ;

ELMER, BR ;

BIARD, JR .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :821-823

[4] MONOLITHIC INTEGRATION OF A LASER DIODE, PHOTO MONITOR, AND ELECTRIC-CIRCUITS ON A SEMI-INSULATING GAAS SUBSTRATE [J].

MATSUEDA, H ;

NAKAMURA, M .

APPLIED OPTICS, 1984, 23 (06) :779-780

[5] A MONOLITHICALLY INTEGRATED ALGAAS/GAAS P-I-N/FET PHOTORECEIVER BY MOCVD [J].

MIURA, S ;

WADA, O ;

HAMAGUCHI, H ;

ITO, M ;

MAKIUCHI, M ;

NAKAI, K ;

SAKURAI, T .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :375-376

[6] MONOLITHIC INTEGRATION OF A PIN PHOTODIODE AND A FIELD-EFFECT TRANSISTOR USING A NEW FABRICATION TECHNIQUE - GRADED STEP PROCESS [J].

MIURA, S ;

MACHIDA, H ;

WADA, O ;

NAKAI, K ;

SAKURAI, T .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :389-391

[7] MONOLITHIC PIN PRE-AMPLIFIER CIRCUIT INTEGRATED ON A GAAS SUBSTRATE [J].

WADA, O ;

HAMAGUCHI, H ;

MIURA, S ;

MAKIUCHI, M ;

YAMAKOSHI, S ;

SAKURAI, T ;

NAKAI, K ;

IGUCHI, K .

ELECTRONICS LETTERS, 1983, 19 (24) :1031-1032

[8]

WADA O, 1984 INT C SOL STAT

[9]

WADA O, UNPUB

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