MONOLITHIC PIN PRE-AMPLIFIER CIRCUIT INTEGRATED ON A GAAS SUBSTRATE

被引：13

作者：

WADA, O

HAMAGUCHI, H

MIURA, S

MAKIUCHI, M

YAMAKOSHI, S

SAKURAI, T

NAKAI, K

IGUCHI, K

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 24期

关键词：

D O I：

10.1049/el:19830699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1031 / 1032

页数：2

共 8 条

[1] GAAS INTEGRATED OPTOELECTRONICS [J].

BARCHAIM, N ;

MARGALIT, S ;

YARIV, A ;

URY, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1372-1381

[2]

HAYASHI I, 1983, IOCC ITS CONCEPTS PR, P170

[3]

INOUE K, 1983, MONOLITHICALLY INTEG, P186

[4] PLANAR STRUCTURE ALGAAS/GAAS PIN PHOTO-DIODE GROWN BY MOCVD [J].

ITO, M ;

WADA, O ;

MIURA, S ;

NAKAI, K ;

SAKURAI, T .

ELECTRONICS LETTERS, 1983, 19 (14) :522-523

[5]

KASAHARA K, 1983, MONOLITHICALLY INTEG, P188

[6] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[7]

MATSUEDA H, 1983, J LIGHTWAVE TECHNOL, V1, P261

[8]

WADA O, 1983, IOCC ITS CONCEPTS PR, P184

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