MONOLITHIC INTEGRATION OF A METAL-SEMICONDUCTOR METAL PHOTODIODE AND A GAAS PREAMPLIFIER

被引：66

作者：

ITO, M

WADA, O

NAKAI, K

SAKURAI, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 12期

关键词：

D O I：

10.1109/EDL.1984.26014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：531 / 532

页数：2

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[1] PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER [J].

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[2] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

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[3] A MONOLITHICALLY INTEGRATED ALGAAS/GAAS P-I-N/FET PHOTORECEIVER BY MOCVD [J].

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[5] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS [J].

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[6] MONOLITHIC PIN PRE-AMPLIFIER CIRCUIT INTEGRATED ON A GAAS SUBSTRATE [J].

WADA, O ;

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MIURA, S ;

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[7] SYMMETRICAL MOTT BARRIER AS A FAST PHOTODETECTOR [J].

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ELECTRONICS LETTERS, 1981, 17 (19) :688-690