5.2-GHZ BANDWIDTH MONOLITHIC GAAS OPTOELECTRONIC RECEIVER

被引：56

作者：

HARDER, CS

VANZEGHBROECK, B

MEIER, H

PATRICK, W

VETTIGER, P

机构：

[1] IBM, Rueschlikon, Switz, IBM, Rueschlikon, Switz

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 04期

关键词：

INTEGRATED CIRCUITS; MONOLITHIC - Fabrication - SEMICONDUCTING GALLIUM ARSENIDE - Applications;

D O I：

10.1109/55.679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50- OMEGA output buffer stage has been fabricated using an enhancement/depletion 0. 35- mu m recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal (MSM) photodetector has a dark current of 0. 8 nA, a responsivity of 0. 2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5. 2 GHz with an effective transimpedance of 300 OMEGA into a 50- OMEGA load, which corresponds to a transimpedance bandwidth product of 1. 5 THz- OMEGA .

引用

页码：171 / 173

页数：3

共 12 条

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