SUBMICROMETER GAAS-MESFET WITH SHALLOW CHANNEL AND VERY HIGH TRANSCONDUCTANCE

[1] DOPING DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TI-PT CONTACTS TO N-GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1832 - 1833

[2] CHANG THP, 1976, 7TH P INT C EL ION B, P392

[3] ANALYSIS OF GAAS-FETS FOR INTEGRATED-LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1074 - 1091

[4] MACKIE WS, 1985, SOLID STATE TECHNOLO, V28, P117

[5] HIGH-TRANSCONDUCTANCE SELF ALIGNED GAAS-MESFET USING IMPLANTATION THROUGH AN AIN LAYER [J]. ELECTRONICS LETTERS, 1984, 20 (01) : 45 - 47

[6] LOW-TEMPERATURE ANNEALED CONTACTS TO VERY THIN GAAS EPILAYERS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 986 - 988

[7] UENO K, 1985, P IEDM WASHINGTON, P82

[8] BURIED P-LAYER SAINT FOR VERY HIGH-SPEED GAAS LSIS WITH SUBMICROMETER GATE LENGTH [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2420 - 2425

[1] DOPING DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TI-PT CONTACTS TO N-GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1832 - 1833

[2] CHANG THP, 1976, 7TH P INT C EL ION B, P392

[3] ANALYSIS OF GAAS-FETS FOR INTEGRATED-LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1074 - 1091

[4] MACKIE WS, 1985, SOLID STATE TECHNOLO, V28, P117

[5] HIGH-TRANSCONDUCTANCE SELF ALIGNED GAAS-MESFET USING IMPLANTATION THROUGH AN AIN LAYER [J]. ELECTRONICS LETTERS, 1984, 20 (01) : 45 - 47

[6] LOW-TEMPERATURE ANNEALED CONTACTS TO VERY THIN GAAS EPILAYERS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 986 - 988

[7] UENO K, 1985, P IEDM WASHINGTON, P82

[8] BURIED P-LAYER SAINT FOR VERY HIGH-SPEED GAAS LSIS WITH SUBMICROMETER GATE LENGTH [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2420 - 2425