BURIED P-LAYER SAINT FOR VERY HIGH-SPEED GAAS LSIS WITH SUBMICROMETER GATE LENGTH

[1] INFLUENCE OF N+-LAYER-GATE GAP ON SHORT-CHANNEL EFFECTS OF GAAS SELF-ALIGNED MESFETS (SAINT) [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) : 417 - 419

[2] MATSUMOTO K, 1984, 42ND ANN DEV RES C S

[3] MIYANAGA H, 1984, 16TH C SOL STAT DEV, P225

[4] NAKAMURA H, 1984, 16TH P C SOL STAT DE, P395

[5] OHMORI M, 1984, 11TH INT S GALL ARS

[6] OHNISHI T, 1984, 16TH P C SOL STAT DE, P391

[7] SADLER RA, 1983, APPL PHYS LETT, V43, P856

[8] UMEMOTO Y, 1982, 1982 GAAS IC S NEW O, P173

[9] Yamasaki K., 1982, International Electron Devices Meeting. Technical Digest, P166

[10] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J]. ELECTRONICS LETTERS, 1982, 18 (03) : 119 - 121

[1] INFLUENCE OF N+-LAYER-GATE GAP ON SHORT-CHANNEL EFFECTS OF GAAS SELF-ALIGNED MESFETS (SAINT) [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) : 417 - 419

[2] MATSUMOTO K, 1984, 42ND ANN DEV RES C S

[3] MIYANAGA H, 1984, 16TH C SOL STAT DEV, P225

[4] NAKAMURA H, 1984, 16TH P C SOL STAT DE, P395

[5] OHMORI M, 1984, 11TH INT S GALL ARS

[6] OHNISHI T, 1984, 16TH P C SOL STAT DE, P391

[7] SADLER RA, 1983, APPL PHYS LETT, V43, P856

[8] UMEMOTO Y, 1982, 1982 GAAS IC S NEW O, P173

[9] Yamasaki K., 1982, International Electron Devices Meeting. Technical Digest, P166

[10] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J]. ELECTRONICS LETTERS, 1982, 18 (03) : 119 - 121