INFLUENCE OF N+-LAYER-GATE GAP ON SHORT-CHANNEL EFFECTS OF GAAS SELF-ALIGNED MESFETS (SAINT)

[1] MATSUOKA Y, UNPUB

[2] SZE SM, 1981, PHYSICS SEMICONDUCTO, P470

[3] Yamasaki K., 1982, International Electron Devices Meeting. Technical Digest, P166

[4] BELOW 20 PS GATE OPERATION WITH GAAS SAINT FETS AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1982, 18 (14) : 592 - 593

[5] GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1772 - 1777

[1] MATSUOKA Y, UNPUB

[2] SZE SM, 1981, PHYSICS SEMICONDUCTO, P470

[3] Yamasaki K., 1982, International Electron Devices Meeting. Technical Digest, P166

[4] BELOW 20 PS GATE OPERATION WITH GAAS SAINT FETS AT ROOM-TEMPERATURE [J]. ELECTRONICS LETTERS, 1982, 18 (14) : 592 - 593

[5] GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1772 - 1777