GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT)

被引：39

作者：

YAMASAKI, K

ASAI, K

KURAMADA, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 11期

关键词：

D O I：

10.1109/T-ED.1982.21025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1772 / 1777

页数：6

共 18 条

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