MONOLITHIC INTEGRATION OF LASER-DIODES, PHOTOMONITORS, AND LASER DRIVING AND MONITORING CIRCUITS ON A SEMIINSULATING GAAS

被引：16

作者：

NAKANO, H

YAMASHITA, S

TANAKA, TP

HIRAO, M

MAEDA, M

机构：

来源：

关键词：

D O I：

10.1109/JLT.1986.1074779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：574 / 582

页数：9

共 24 条

[1] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338
[2] CASEY HC, 1978, HETEROSTRUCTURE LA A, P183
[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
COLDREN, LA
IGA, K
MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683
[4] FEY DM, 1981, IEEE J QUANTUM ELECT, V17, P1950
[5] FORREST SR, 1985, C OPTICAL FIBER COMM, P30
[6] MONOLITHIC INTEGRATION OF A GAALAS INJECTION-LASER WITH A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR
FUKUZAWA, T
NAKAMURA, M
HIRAO, M
KURODA, T
UMEDA, J
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 181 - 183
[7] HAYASHI I, 1983, 4TH IOOC TOK, P170
[8] HIRAO M, 1985, 3RD P ECIO BERL, P108
[9] GALNASP-LNP LASER WITH MONOLITHICALLY INTEGRATED MONITORING DETECTOR
IGA, K
MILLER, BI
[J]. ELECTRONICS LETTERS, 1980, 16 (09) : 342 - 343
[10] GIGABIT PER 2ND OPERATION BY MONOLITHICALLY INTEGRATED INGAASP/INP LD-FET
KASAHARA, K
HAYASHI, J
NOMURA, H
[J]. ELECTRONICS LETTERS, 1984, 20 (15) : 618 - 619