HIGH-SPEED MONOLITHICALLY INTEGRATED GAAS PHOTORECEIVER USING A METAL-SEMICONDUCTOR-METAL PHOTODIODE

被引：22

作者：

ITO, M

KUMAI, T

HAMAGUCHI, H

MAKIUCHI, M

NAKAI, K

WADA, O

SAKURAI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1129 / 1131

页数：3

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[1] MONOLITHIC INTEGRATION OF A METAL-SEMICONDUCTOR METAL PHOTODIODE AND A GAAS PREAMPLIFIER
ITO, M
WADA, O
NAKAI, K
SAKURAI, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 531 - 532
[2] ITO M, UNPUB
[3] PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER
KOLBAS, RM
ABROKWAH, J
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BRADSHAW, DH
ELMER, BR
BIARD, JR
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 821 - 823
[4] A MONOLITHICALLY INTEGRATED ALGAAS/GAAS P-I-N/FET PHOTORECEIVER BY MOCVD
MIURA, S
WADA, O
HAMAGUCHI, H
ITO, M
MAKIUCHI, M
NAKAI, K
SAKURAI, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 375 - 376
[5] MONOLITHIC INTEGRATION OF A PIN PHOTODIODE AND A FIELD-EFFECT TRANSISTOR USING A NEW FABRICATION TECHNIQUE - GRADED STEP PROCESS
MIURA, S
MACHIDA, H
WADA, O
NAKAI, K
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 389 - 391
[6] ALGAAS/GAAS P-I-N PHOTODIODE PREAMPLIFIER MONOLITHIC PHOTORECEIVER INTEGRATED ON A SEMI-INSULATING GAAS SUBSTRATE
WADA, O
HAMAGUCHI, H
MIURA, S
MAKIUCHI, M
NAKAI, K
HORIMATSU, H
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 981 - 983