NANOSCALE METAL-SEMICONDUCTOR METAL PHOTODETECTORS WITH SUBPICOSECOND RESPONSE-TIME FABRICATED USING ELECTRON-BEAM LITHOGRAPHY

被引：11

作者：

LIU, MY ^{[1
]}

CHOU, SY ^{[1
]}

HSIANG, TY ^{[1
]}

ALEXANDROU, S ^{[1
]}

SOBOLEWSKI, R ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14627

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.586338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-semiconductor-metal photodetectors (MSM PDs) with finger spacing and width as small as 25 nm have been fabricated using high-resolution electron beam lithography. Measurements using an electro-optic sampling system show that the fastest detector has a full width at half-maximum response time of 0.87 ps and a 3 dB bandwidth of 510 GHz. Monte Carlo simulation of detector response time is studied and compared with experimental data. Finally, scaling rules for high-speed MSM PDs are proposed.

引用

页码：2932 / 2935

页数：4

共 12 条

[1] CHANG GK, 1987, UNPUB OCT IEEE GAAS, P57
[2] 375-GHZ-BANDWIDTH PHOTOCONDUCTIVE DETECTOR
CHEN, Y
WILLIAMSON, S
BROCK, T
SMITH, FW
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (16) : 1984 - 1986
[3] TERAHERTZ GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH 25 NM FINGER SPACING AND FINGER WIDTH
CHOU, SY
LIU, Y
FISCHER, PB
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (04) : 477 - 479
[4] FABRICATION OF SUB-50 NM FINGER SPACING AND WIDTH HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTORS USING HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND MOLECULAR-BEAM EPITAXY
CHOU, SY
LIU, Y
FISCHER, PB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 2920 - 2924
[5] DOUBLE 15-NM-WIDE METAL GATES 10 NM APART AND 70 NM THICK ON GAAS
CHOU, SY
FISCHER, PB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1919 - 1922
[6] 5.2-GHZ BANDWIDTH MONOLITHIC GAAS OPTOELECTRONIC RECEIVER
HARDER, CS
VANZEGHBROECK, B
MEIER, H
PATRICK, W
VETTIGER, P
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) : 171 - 173
[7] HSIANG TY, 1992, UNPUB MAY C LAS EL A
[8] LOW DARK CURRENT GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODIODES USING WSIX CONTACTS
ITO, M
WADA, O
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (07) : 1073 - 1077
[9] LIM YC, 1968, IEEE T ELECTRON DEV, VED15, P173
[10] A SIMPLE HIGH-SPEED SI SCHOTTKY PHOTODIODE
MULLINS, BW
SOARES, SF
MCARDLE, KA
WILSON, CM
BRUECK, SRJ
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (04) : 360 - 362

← 1 2 →